(China (Mainland))
Product Summary
The CSD16340Q3 is an NexFET power MOSFET. It has been designed to minimize losses in power conversion and optimized for 5V gate drive applications. The applications of the CSD16340Q3 include Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems and Optimized for Control or Synchronous FET Applications.
Parametrics
CSD16340Q3 absolute maximum ratings: (1)VDS, Drain to Source Voltage: 25 V; (2)VGS, Gate to Source Voltage: +10 / –8 V; (3)Continuous Drain Current, TC = 25℃: 60 A; (4)ID, Continuous Drain Current: 21 A; (5)IDM, Pulsed Drain Current, TA = 25℃: 115 A; (6)PD, Power Dissipation: 3 W; (7)TJ, TSTG,Operating Junction and Storage Temperature Range: –55 to 150℃; (8)EAS, Avalanche Energy, single pulse, ID = 40A, L = 0.1mH, RG = 25Ω: 80 mJ.
Features
CSD16340Q3 features: (1)Optimized for 5V Gate Drive; (2)Resistance Rated at VGS = 2.5V; (3)Ultra Low Qg and Qgd; (4)Low Thermal Resistance; (5)Avalanche Rated; (6)Pb Free Terminal Plating; (7)RoHS Compliant; (8)Halogen Free; (9)SON 3.3mm × 3.3mm Plastic Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 CSD16340Q3 |
Texas Instruments |
MOSFET N Channel NexFET Power MOSFET |
Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
Negotiable |
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