(China (Mainland))
Product Summary
The PBSS301PD is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. The applications of the PBSS301PD include Power management functions, Charging circuits, DC-to-DC conversion, MOSFET gate driving, Power switches (e.g. motors, fans) and Thin Film Transistor (TFT) backlight inverter.
Parametrics
PBSS301PD absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: -20 V; (2)VCEO, collector-emitter voltage open base: -20 V; (3)VEBO, emitter-base voltage open collector: -5V; (4)IC, collector current: -4A; (5)ICM, peak collector current single pulse; tp ≤ 1ms: -15 A; (6)IB, base current: -0.8 A; (7)IBM, peak base current single pulse; tp ≤ 1ms: -2A; (8)Ptot, total power dissipation Tamb ≤ 25℃: 360 mW.
Features
PBSS301PD features: (1)Very low collector-emitter saturation resistance; (2)Ultra low collector-emitter saturation voltage; (3)4 A continuous collector current; (4)Up to 15 A peak current; (5)High efficiency due to less heat generation.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 PBSS301PD T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) PNP 20V 4A LOW SAT |
Data Sheet |
Negotiable |
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PBSS301PD,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) PNP 20V 4A LOW SAT |
Data Sheet |
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