(China (Mainland))
Product Summary
The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50Ω. The RF3159 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The RF3159 is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The RF3159 is packaged on a 6mmx6mm laminate module with a protective plastic overmold.
Parametrics
RF3159 absolute maximum ratings: (1)Supply Voltage (VCC): -0.5 to +6.0 V; (2)Power Control Voltage (VRAMP): -0.5 to +3.0 V; (3)Band Select: 3.0 V; (4)TX Enable: 3.0 V; (5)VBIAS: 3.0 V; (6)VMODE: 3.0 V; (7)RF - Input Power: 12.0 dBm; (8)Max Duty Cycle: 50 %; (9)Output Load VSWR: 10: 1; (10)Operating Case Temperature: -20 to +85 ℃; (11)Storage Temperature: -55 to +150 ℃.
Features
RF3159 features: (1)High Gain for use in Systems with Low RF Driver Power; (2)Linear EDGE and GSM Operation; (3)PowerStar GSM/GPRS Power Control; (4)Digital Band Select Enables GSM850, EGSM900 or DCS, PCS Amplifier Lineup; (5)Single Supply Voltage; Requires no External Reference Voltage; (6)Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage; (7)Low Power Mode for Reduced EDGE Current; (8)Digital Bias Control for Simple Implementation of Low Power Mode; (9)Compact 6mmx6mm Package.
Diagrams
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RF3100-2 |
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